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International Journal of Electronics Signals and Systems

Abstract

Carbon Nanotube Field Effect Transistors (CNTFETs) is a promising device alternative for future nanometersscale technology. This paper presents 3TCNTFET & 4TCNTFET simulation and analysis of DRAM with metallic CNTFET using a CNTFET SPICE(HSPICE) model with 32ns technology have shown the DRAM cells in terms of leakage power, power dissipation, delay time, dynamic write and read power. Here, comparison between 4TDRAM and 3TDRAM memory cells is also shown which 3TDRAM has better performance in power dissipation and leakage power than 4TDRAM cell, but less delay in 4TDRAM.

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