International Journal of Electronics Signals and Systems


This paper describes the characteristics comparison of bulk FINFET and SOI FINFET. The scaling trend in device dimension require limit on short channel effect through the control of subthreshold slope and DIBL characteristics.It can be achieved by proper device design. The subthreshold characteristics are plotted with the variation of gate voltage for different doping profile .This paper also compares the performance improvement of Multi-gate Bulk and SOI MOSFET over Single-gate bulk and SOI MOSFET.The simulation results are obtained with the help of TCAD 3-D device simulator are well matched with the ideal characteristics.



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