In this paper, the effect of temperature variation and doping variation of p-body on various parameters like Breakdown voltage, on resistance, drain leakage current, threshold voltage etc of SOI laterally diffused MOSFET has been analyzed. Since power mosfet is designed for radio frequency power amplifiers which is used in wireless system-on-a-chip applications. The device is fabricated on a thin-film SOI wafer in order to reduce the leakage current and also prohibit the formation of parasitic diode with substrate. On the basis of analysis we are able to prove that this SOI LDMOSFET has +ve temperature coefficient for breakdown voltage, negative temp coefficient for threshold voltage, positive temperature coefficient for on resistance and +ve temperature coefficient for drain leakage current.
BAJPAI, DEEKSHA and UPADHYAY, AVNISH KUMAR
"ANALYSIS OF ELECTRICAL BEHAVIOR OF SOI LDMOSFET WITH RESPECT TO TEMPERATURE AND DOPING USING T-CAD SIMULATOR,"
International Journal of Electronics and Electical Engineering: Vol. 3
, Article 12.
Available at: https://www.interscience.in/ijeee/vol3/iss3/12