International Journal of Electronics and Electical Engineering


The present work is dedicated to the numeric physical modelisation of the potential to the interface of a heterostructure in GaAsAl/GaAs. Calculs, using some projective methods, permitting the integration of Hamiltonian, with Green functions in the equation of Schrödinger, for a rigorous resolution with the equation of Poisson are elaborated. A study of convergence of globally no linear system is done and it confirmed for ten bases functions and a very determined electric wall position. The different parameter influence on performances of the GaAsAl/GaAs heterostructure is put in evidence; what will permit us subsequently to consider the dynamic of the carriers in a HEMT heterostructure by rigorous and complete manner.





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