•  
  •  
 

International Journal of Electronics and Electical Engineering

Abstract

The present work is dedicated to the numeric physical modelisation of the potential to the interface of a heterostructure in GaAsAl/GaAs. Calculs, using some projective methods, permitting the integration of Hamiltonian, with Green functions in the equation of Schrödinger, for a rigorous resolution with the equation of Poisson are elaborated. A study of convergence of globally no linear system is done and it confirmed for ten bases functions and a very determined electric wall position. The different parameter influence on performances of the GaAsAl/GaAs heterostructure is put in evidence; what will permit us subsequently to consider the dynamic of the carriers in a HEMT heterostructure by rigorous and complete manner.

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.