This paper presents the effect of source/drain metal contacts on the electrical behavior of GeOI MOSFETs. The band diagram and current-voltage characteristics of the MOSFET are obtained using SILVACOATLAS, a 2D numerical device simulator, for various metals having a range of work function values. Our investigation reveals that the device using metals having a work function value more than 5 eV exhibits enhanced ON current, transconductance, intrinsic voltage gain, and also reduced subthreshold slope and OFF current.
MONDAL, CHANDRIMA and BISWAS, ABHIJIT
"IMPACT OF METAL SOURCE/DRAIN CONTACTS ON GE-ON INSULATOR (GEOI) MOSFETS,"
International Journal of Electronics and Electical Engineering: Vol. 2
, Article 15.
Available at: https://www.interscience.in/ijeee/vol2/iss4/15