"IMPACT OF METAL SOURCE/DRAIN CONTACTS ON GE-ON INSULATOR (GEOI) MOSFET" by CHANDRIMA MONDAL and ABHIJIT BISWAS

Home > JOURNALS > IJEEE > Vol. 2 > Iss. 4 (2014)

International Journal of Electronics and Electical Engineering

Article Title

IMPACT OF METAL SOURCE/DRAIN CONTACTS ON GE-ON INSULATOR (GEOI) MOSFETS

Authors

CHANDRIMA MONDAL, Institute of Radio Physics and Electronics, University of Calcutta, Kolkata-700009, IndiaFollow
ABHIJIT BISWAS, Dept. of Radio Physics and Electronics, University of Calcutta, Kolkata, IndiaFollow

Abstract

This paper presents the effect of source/drain metal contacts on the electrical behavior of GeOI MOSFETs. The band diagram and current-voltage characteristics of the MOSFET are obtained using SILVACOATLAS, a 2D numerical device simulator, for various metals having a range of work function values. Our investigation reveals that the device using metals having a work function value more than 5 eV exhibits enhanced ON current, transconductance, intrinsic voltage gain, and also reduced subthreshold slope and OFF current.

Recommended Citation

MONDAL, CHANDRIMA and BISWAS, ABHIJIT (2014) "IMPACT OF METAL SOURCE/DRAIN CONTACTS ON GE-ON INSULATOR (GEOI) MOSFETS," International Journal of Electronics and Electical Engineering: Vol. 2 : Iss. 4 , Article 15.
Available at: https://www.interscience.in/ijeee/vol2/iss4/15

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