"STUDIES ON GE-ON-INSULATOR MOSFETS USING METAL SOURCE/DRAIN CONTACTS F" by CHANDRIMA MONDAL and ABHIJIT BISWAS

International Journal of Electronics and Electical Engineering

Article Title

STUDIES ON GE-ON-INSULATOR MOSFETS USING METAL SOURCE/DRAIN CONTACTS FOR ANALOG/ MIXED SIGNAL APPLICATIONS

Authors

CHANDRIMA MONDAL, Institute of Radio Physics and Electronics, University of Calcutta, Kolkata-700009, IndiaFollow
ABHIJIT BISWAS, Dept. of Radio Physics and Electronics, University of Calcutta, Kolkata, IndiaFollow

Abstract

In this paper, we report the effect of source/drain metal contacts on the electrical behavior of GeOI MOSFETs. The band diagram and current-voltage characteristics of the MOSFET are obtained using SILVACOATLAS, a 2D numerical device simulator, for various metals having a range of work function values. Our investigation reveals that the device using metals having a work function value more than 5 eV exhibits enhanced ON current, transconductance, intrinsic voltage gain, and also reduced subthreshold slope and OFF current.

Recommended Citation

MONDAL, CHANDRIMA and BISWAS, ABHIJIT (2014) "STUDIES ON GE-ON-INSULATOR MOSFETS USING METAL SOURCE/DRAIN CONTACTS FOR ANALOG/ MIXED SIGNAL APPLICATIONS," International Journal of Electronics and Electical Engineering: Vol. 2: Iss. 4, Article 14.
DOI: 10.47893/IJEEE.2014.1116
Available at: https://www.interscience.in/ijeee/vol2/iss4/14

DOI

10.47893/IJEEE.2014.1116

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