A review is presented on the advances in InAlAs/InGaAs High Electron Mobility transistors (HEMT) on silicon substrates for high frequency and low noise applications. Although InAlAs/InGaAs HEMTs on InP and GaAs substrates have been much appreciated due to their superior performance, their widespread applications have been hindered due to higher cost of the substrates. Silicon has been used as an alternative substrate considering the benefits of low cost, technological maturity and integration of III-V and silicon technology inspite of the constraints like lattice mismatch and large difference in thermal expansion coefficient.
Gomes, Umesh.P.; Kuldeep, Mr.; Rathi, S.; and Biswas, Dhrubes
"A Strategic Review on Growth of InP on Silicon Substrate for Applications in High Frequency RF Devices,"
International Journal of Electronics and Electical Engineering: Vol. 1:
1, Article 12.
Available at: https://www.interscience.in/ijeee/vol1/iss1/12